Knowledge Management System of Institue of Mechanics, CAS
| p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering | |
Wang P; Chen NF(陈诺夫) ; Yin ZG; Dai RX; Bai YM; Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
| |
| Source Publication | Applied Physics Letters
 |
| 2006 | |
| Volume | 89Issue:20Pages:Art.No.202102 |
| ISSN | 0003-6951 |
| Abstract | Sb-doped Zn1-xMgxO films were grown on c-plane sapphire ubstrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics. |
| Subject Area | 力学 |
| DOI | 10.1063/1.2388254 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000242100200036 |
| WOS Keyword | ZNO THIN-FILMS ; MGXZN1-XO ; DEVICES ; ALLOY |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/15399 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Wang P,Chen NF,Yin ZG,et al. p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering[J]. Applied Physics Letters,2006,89,20,:Art.No.202102. |
| APA | Wang P,陈诺夫,Yin ZG,Dai RX,Bai YM,&Wang, P .(2006).p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering.Applied Physics Letters,89(20),Art.No.202102. |
| MLA | Wang P,et al."p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering".Applied Physics Letters 89.20(2006):Art.No.202102. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| p type Zn1.xMgxO fil（145KB） | 开放获取 | -- | View Download | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment