Knowledge Management System of Institue of Mechanics, CAS
| Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors | |
Peng CT; Chen NF(陈诺夫) ; Gao FB; Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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| Source Publication | Applied Physics Letters
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| 2006 | |
| Volume | 68Issue:24Pages:242108 |
| ISSN | 0003-6951 |
| Subject Area | 力学 |
| DOI | 10.1063/1.2209709 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000238314800050 |
| WOS Keyword | MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; ENERGY-GAP ; 100 GAAS ; INASSB ; INAS1-XSBX ; ALLOYS ; INSB ; TRANSPORT ; LAYERS |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/15657 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Peng CT,Chen NF,Gao FB,et al. Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors[J]. Applied Physics Letters,2006,68,24,:242108. |
| APA | Peng CT,陈诺夫,Gao FB,&Peng, CT .(2006).Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors.Applied Physics Letters,68(24),242108. |
| MLA | Peng CT,et al."Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors".Applied Physics Letters 68.24(2006):242108. |
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| 145934.pdf（101KB） | 开放获取 | -- | View Download | |||
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