Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

doi:10.1007/s003390050714

IMECH-IR > 力学所知识产出(1956-2008)

	Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV
	Xu ZL(徐自亮); Xu WJ; Li L; Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China.
发表期刊	Applied Physics A-Materials Science & Processing
	1998
卷号	66 期号:5 页码:565-567
ISSN	0947-8396
摘要	III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.
学科领域	力学
DOI	10.1007/s003390050714
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000073639100016
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/15874
专题	力学所知识产出(1956-2008)
通讯作者	Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Xu ZL,Xu WJ,Li L,et al. Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV[J]. Applied Physics A-Materials Science & Processing,1998,66,5,:565-567.
APA	徐自亮,Xu WJ,Li L,&Xu, ZL .(1998).Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV.Applied Physics A-Materials Science & Processing,66(5),565-567.
MLA	徐自亮,et al."Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV".Applied Physics A-Materials Science & Processing 66.5(1998):565-567.

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