液体金属吸附促进位错发射的分子动力学研究

IMECH-IR > 力学所知识产出(1956-2008)

	液体金属吸附促进位错发射的分子动力学研究
	周国辉; 周富信; 万发荣; 褚武扬
Source Publication	力学学报
	2000
Volume	32 Issue:3 Pages:272
ISSN	0459-1879
Abstract	结果表明，Al吸附Ga后可使发现位错的临界应力强度因子从K_(Ie)=0.5MPam~(1/2)降为K_(Ie)(L)=0.4Mpam~(1/2)；对Cu则从K_(Ie)=0.55MPam~(1/2)降为K_(Ie)(L)=0.45MPam~(1/2)，即Ga吸附后能促进位错的发现。另外，吸附Ga之后裂尖前方容易产生空位团及Frank位错。
Keyword	液体金属脆分子动力学模拟 Ga Al
Subject Area	力学
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:703787
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/16794
Collection	力学所知识产出(1956-2008)
Recommended Citation GB/T 7714	周国辉,周富信,万发荣,等. 液体金属吸附促进位错发射的分子动力学研究[J]. 力学学报,2000,32,3,:272.
APA	周国辉,周富信,万发荣,&褚武扬.(2000).液体金属吸附促进位错发射的分子动力学研究.力学学报,32(3),272.
MLA	周国辉,et al."液体金属吸附促进位错发射的分子动力学研究".力学学报 32.3(2000):272.

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