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真空辐射加热基片的温度分布
Alternative TitleTHE TEMPERATURE DISTRIBUTION IN A SUBSTRATE RADIATIVELY HEATED IN VACUUM
李帅辉; 舒勇华; 唐锦荣; 樊菁
Source Publication力学与实践
2006
Volume28Issue:3Pages:19-23
ISSN1000-0879
Abstract真空辐射加热下基片表面温度分布的均匀性是薄膜制备中的关键问题之一。采用数值计算和比色红外测温两种方法,研究了作者自行研制的真空辐射加热器(IMCAS-VRH)的性能。利用IMCAS-VRH加热直径6in的单晶硅基片,当电功率为3860W时,基片表面平均温度为1093K,整个基片上的温度变化的测量值约为6 K。基片表面温度分布的计算结果与测量数据符合得很好,进一步的计算分析表明钼丝对辐射的遮挡效应、隔热屏和基片热传导等对基片温度分布均匀性有重要影响。
Keyword薄膜气相沉积 真空辐射加热 基片温度分布
Subject Area力学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2445509
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/17117
Collection力学所知识产出(1956-2008)
Recommended Citation
GB/T 7714
李帅辉,舒勇华,唐锦荣,等. 真空辐射加热基片的温度分布[J]. 力学与实践,2006,28,3,:19-23.
APA 李帅辉,舒勇华,唐锦荣,&樊菁.(2006).真空辐射加热基片的温度分布.力学与实践,28(3),19-23.
MLA 李帅辉,et al."真空辐射加热基片的温度分布".力学与实践 28.3(2006):19-23.
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