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Investigation of Mn-Implanted n-Type Ge | |
Liu LF; Chen NF(陈诺夫); Yin ZG; Yang F; Zhou JP; Zhang FQ; Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. | |
Source Publication | Journal of Crystal Growth |
2004 | |
Volume | 265Issue:3-4Pages:466-470 |
ISSN | 0022-0248 |
Abstract | Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature. |
Subject Area | 力学 |
DOI | 10.1016/j.jcrysgro.2004.02.007 |
Indexed By | SCI |
Language | 英语 |
WOS ID | WOS:000221205100017 |
WOS Keyword | SEMICONDUCTOR ; FERROMAGNETISM |
WOS Research Area | Crystallography ; Materials Science ; Physics |
WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/17282 |
Collection | 力学所知识产出(1956-2008) |
Corresponding Author | Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Liu LF,Chen NF,Yin ZG,et al. Investigation of Mn-Implanted n-Type Ge[J]. Journal of Crystal Growth,2004,265,3-4,:466-470. |
APA | Liu LF.,陈诺夫.,Yin ZG.,Yang F.,Zhou JP.,...&Liu, LF .(2004).Investigation of Mn-Implanted n-Type Ge.Journal of Crystal Growth,265(3-4),466-470. |
MLA | Liu LF,et al."Investigation of Mn-Implanted n-Type Ge".Journal of Crystal Growth 265.3-4(2004):466-470. |
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