IMECH-IR  > 力学所知识产出(1956-2008)
Piezoelectricity of ZnO films prepared by sol-gel method
Zhang KM; Zhao YP(赵亚溥); He FQ(何发泉); Liu DQ; Zhao YP
Source PublicationChinese Journal Of Chemical Physics
2007
Pages721-726
Conference Name6th China International Conference on Nanoscience and Technology
Conference Date2007
Conference PlaceChengdu, PEOPLES R CHINA
AbstractZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.
KeywordZno Thin Films Piezoelectric Coefficient Piezo-response Force Microscope Sol-gel Surface Roughness Resistivity
WOS IDWOS:000252031900021
Indexed ByCPCI-S
Language英语
Citation statistics
Cited Times:38[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/25480
Collection力学所知识产出(1956-2008)
Corresponding AuthorZhao YP
Recommended Citation
GB/T 7714
Zhang KM,Zhao YP,He FQ,et al. Piezoelectricity of ZnO films prepared by sol-gel method[C]Chinese Journal Of Chemical Physics,2007:721-726.
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