| Piezoelectricity Of Zno Films Prepared By Sol-Gel Method |
| Zhang KM; Zhao YP(赵亚溥) ; He FQ(何发泉); Liu DQ; Zhao, YP (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100080, Peoples R China.
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| Source Publication | Chinese Journal of Chemical Physics
(IF:0.791[JCR-2018],0.671[5-Year]) |
| 2007
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| Pages | 721-726 |
| ISSN | 1003-7713
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| Abstract | ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency. |
| Keyword | Zno Thin Films
Piezoelectric Coefficient
Piezo-response Force Microscope
Sol-gel
Surface Roughness
Resistivity
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| DOI | 10.1088/1674-0068/20/06/721-726
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| Indexed By | SCI
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| Language | 英语
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| WOS ID | WOS:000252031900021
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| WOS Keyword | RESISTIVITY
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| WOS Research Area | Physics
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| WOS Subject | Physics, Atomic, Molecular & Chemical
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| Citation statistics |
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| Document Type | 期刊论文
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| Identifier | http://dspace.imech.ac.cn/handle/311007/25570
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| Collection | 力学所知识产出(1956-2008)
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| Corresponding Author | Zhao, YP (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100080, Peoples R China. |
Recommended Citation
GB/T 7714 |
Zhang KM,Zhao YP,He FQ,et al. Piezoelectricity Of Zno Films Prepared By Sol-Gel Method[J]. Chinese Journal of Chemical Physics,2007:721-726.
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| APA |
Zhang KM,赵亚溥,何发泉,Liu DQ,&Zhao, YP .(2007).Piezoelectricity Of Zno Films Prepared By Sol-Gel Method.Chinese Journal of Chemical Physics,721-726.
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| MLA |
Zhang KM,et al."Piezoelectricity Of Zno Films Prepared By Sol-Gel Method".Chinese Journal of Chemical Physics (2007):721-726.
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