Knowledge Management System of Institue of Mechanics, CAS
| Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy | |
Gao FB; Chen NF(陈诺夫) ; Zhang XW; Wang Y; Liu L(刘蕾); Yin ZG; Wu JL
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| Source Publication | Journal of Applied Physics
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| 2008 | |
| ISSN | 0021-8979 |
| Abstract | The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116] |
| Keyword | Molecular-beam Epitaxy |
| DOI | 10.1063/1.2989116 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000260125500074 |
| WOS Research Area | Mechanics |
| WOS Subject | Mechanics |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/25862 |
| Collection | 力学所知识产出(1956-2008) |
| Recommended Citation GB/T 7714 | Gao FB,Chen NF,Zhang XW,et al. Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy[J]. Journal of Applied Physics,2008. |
| APA | Gao FB.,陈诺夫.,Zhang XW.,Wang Y.,刘蕾.,...&Wu JL.(2008).Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy.Journal of Applied Physics. |
| MLA | Gao FB,et al."Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy".Journal of Applied Physics (2008). |
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