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| Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) | |
Zhou JP; Chai CL; Yang SY; Liu ZK; Song SL; Li YL; Chen NF(陈诺夫) ; Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2004 | |
| Volume | 270Issue:1-2Pages:21-29 |
| ISSN | 0022-0248 |
| Abstract | Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved. |
| Keyword | Auger Electron Spectroscopy Atomic Force Microscopy Crystal Structures X-ray Photoelectron Spectroscopy Ion-beam Deposition Oxides 4d Photoemission High-resolution Thin-films Silicon System Gd2o3 Y2o3 |
| DOI | 10.1016/j.jcrysgro.2004.05.114 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000224134900004 |
| WOS Keyword | 4D PHOTOEMISSION ; HIGH-RESOLUTION ; THIN-FILMS ; SILICON ; SYSTEM ; GD2O3 ; Y2O3 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33763 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China. |
| Recommended Citation GB/T 7714 | Zhou JP,Chai CL,Yang SY,et al. Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)[J]. Journal of Crystal Growth,2004,270,1-2,:21-29. |
| APA | Zhou JP.,Chai CL.,Yang SY.,Liu ZK.,Song SL.,...&Zhou, JP .(2004).Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD).Journal of Crystal Growth,270(1-2),21-29. |
| MLA | Zhou JP,et al."Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)".Journal of Crystal Growth 270.1-2(2004):21-29. |
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