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| Mn implanted GaAs by low energy ion beam deposition | |
Song SL; Chen NF(陈诺夫) ; Zhou JP; Yin ZG; Li YL; Yang SY; Liu ZK; Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2004 | |
| Volume | 264Issue:1-3Pages:31-35 |
| ISSN | 0022-0248 |
| Abstract | High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved. |
| Keyword | X-ray Diffraction Ion Beam Deposit Magnetic Materials Semiconducting Gallium Arsenide Curie-temperature Semiconductors Ferromagnetism System Mn)As (Ga Gan |
| DOI | 10.1016/j.jcrysgro.2003.12.039 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000220345400007 |
| WOS Keyword | CURIE-TEMPERATURE ; SEMICONDUCTORS ; FERROMAGNETISM ; SYSTEM ; MN)AS ; (GA ; GAN |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33809 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Song SL,Chen NF,Zhou JP,et al. Mn implanted GaAs by low energy ion beam deposition[J]. Journal of Crystal Growth,2004,264,1-3,:31-35. |
| APA | Song SL.,陈诺夫.,Zhou JP.,Yin ZG.,Li YL.,...&Song, SL .(2004).Mn implanted GaAs by low energy ion beam deposition.Journal of Crystal Growth,264(1-3),31-35. |
| MLA | Song SL,et al."Mn implanted GaAs by low energy ion beam deposition".Journal of Crystal Growth 264.1-3(2004):31-35. |
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