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| FexSi grown with mass-analyzed low-energy dual ion beam deposition | |
Liu LF; Chen NF(陈诺夫) ; Zhang FQ(张富强); Chen CL; Li YL; Yang SY; Liu Z; Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2004 | |
| Volume | 263Issue:1-4Pages:143-147 |
| ISSN | 0022-0248 |
| Abstract | Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved. |
| Keyword | Auger Electron Spectroscopy X-ray Diffraction Ion Beam depositIon Semiconducting Silicon Doped Si-mn Spin-photonics Thin-films Silicon Gas |
| DOI | 10.1016/j.jcrysgro.2003.11.092 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000220184400023 |
| WOS Keyword | DOPED SI-MN ; SPIN-PHOTONICS ; THIN-FILMS ; SILICON ; GAS |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33811 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Liu LF,Chen NF,Zhang FQ,et al. FexSi grown with mass-analyzed low-energy dual ion beam deposition[J]. Journal of Crystal Growth,2004,263,1-4,:143-147. |
| APA | Liu LF.,陈诺夫.,张富强.,Chen CL.,Li YL.,...&Liu, LF .(2004).FexSi grown with mass-analyzed low-energy dual ion beam deposition.Journal of Crystal Growth,263(1-4),143-147. |
| MLA | Liu LF,et al."FexSi grown with mass-analyzed low-energy dual ion beam deposition".Journal of Crystal Growth 263.1-4(2004):143-147. |
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