The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

doi:10.1016/j.jcrysgro.200310.031

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	The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
	Zhang FQ(张富强); Chen NF(陈诺夫); Liu XL; Liu ZK; Yang SY; Chai CL; Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
发表期刊	Journal of Crystal Growth
	2004
卷号	262 期号:1-4 页码:287-289
ISSN	0022-0248
摘要	Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.
关键词	X-ray Diffraction Ion Beam depositIon Gan/al2o3 Ferromagnetic Materials Implanted Gan Injection
DOI	10.1016/j.jcrysgro.200310.031
收录类别	SCI
语种	英语
WOS记录号	WOS:000189098700043
关键词[WOS]	IMPLANTED GAN ; INJECTION
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：17[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/33817
专题	力学所知识产出(1956-2008)
通讯作者	Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang FQ,Chen NF,Liu XL,et al. The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N[J]. Journal of Crystal Growth,2004,262,1-4,:287-289.
APA	张富强.,陈诺夫.,Liu XL.,Liu ZK.,Yang SY.,...&Zhang, FQ .(2004).The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N.Journal of Crystal Growth,262(1-4),287-289.
MLA	张富强,et al."The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N".Journal of Crystal Growth 262.1-4(2004):287-289.

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