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| Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy | |
Chen CL; Chen NF(陈诺夫) ; Liu LF; Li YL; Wu JL; Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2004 | |
| Volume | 260Issue:1-2Pages:50-53 |
| ISSN | 0022-0248 |
| Abstract | The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved. |
| Keyword | X-ray Diffraction Liquid Phase Epitaxy Semiconducting Ternary Compounds |
| DOI | 10.1016/j.jcrysgro.2003.08.022 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000187730000008 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33829 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Chen CL,Chen NF,Liu LF,et al. Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy[J]. Journal of Crystal Growth,2004,260,1-2,:50-53. |
| APA | Chen CL,陈诺夫,Liu LF,Li YL,Wu JL,&Chen, CL .(2004).Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy.Journal of Crystal Growth,260(1-2),50-53. |
| MLA | Chen CL,et al."Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy".Journal of Crystal Growth 260.1-2(2004):50-53. |
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