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| (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit | |
Song SL; Chen NF(陈诺夫) ; Zhou JP; Li YL; Chai CL; Yang SY; Liu ZK; Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2004 | |
| Volume | 260Issue:3-4Pages:451-455 |
| ISSN | 0022-0248 |
| Abstract | (Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved. |
| Keyword | Auger Electron Spectroscopy X-ray Diffraction Ion-beam Epitaxy Gadolinium Compounds Metal-insulator-transition Epitaxy |
| DOI | 10.1016/j.jcrysgro.2003.08.058 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000187781300027 |
| WOS Keyword | METAL-INSULATOR-TRANSITION ; EPITAXY |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33831 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Song SL,Chen NF,Zhou JP,et al. (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit[J]. Journal of Crystal Growth,2004,260,3-4,:451-455. |
| APA | Song SL.,陈诺夫.,Zhou JP.,Li YL.,Chai CL.,...&Song, SL .(2004).(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit.Journal of Crystal Growth,260(3-4),451-455. |
| MLA | Song SL,et al."(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit".Journal of Crystal Growth 260.3-4(2004):451-455. |
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