Knowledge Management System of Institue of Mechanics, CAS
| On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method | |
Yin ZG; Chen NF(陈诺夫) ; Dai RX(戴瑞烜); Liu L; Zhang XW; Wang XH; Wu JL; Chai CL; Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2007 | |
| Volume | 305Issue:1Pages:296-301 |
| ISSN | 0022-0248 |
| Abstract | Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved. |
| Keyword | Nanostructures Physical Vapor Deposition Processes Zno Semiconducting Materials Thin-films Optical-properties Vapor-deposition Growth-mechanism Nanowires Nanosheets Sapphire Emission |
| DOI | 10.1016/j.jcrysgro.2007.04.043 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000247841300049 |
| WOS Keyword | THIN-FILMS ; OPTICAL-PROPERTIES ; VAPOR-DEPOSITION ; GROWTH-MECHANISM ; NANOWIRES ; NANOSHEETS ; SAPPHIRE ; EMISSION |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/33937 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Yin ZG,Chen NF,Dai RX,et al. On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method[J]. Journal of Crystal Growth,2007,305,1,:296-301. |
| APA | Yin ZG.,陈诺夫.,戴瑞烜.,Liu L.,Zhang XW.,...&Yin, ZG .(2007).On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method.Journal of Crystal Growth,305(1),296-301. |
| MLA | Yin ZG,et al."On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method".Journal of Crystal Growth 305.1(2007):296-301. |
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