InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

doi:10.1016/j.jcrysgro.2007.03.011

IMECH-IR > 力学所知识产出(1956-2008)

	InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
	Gao FB; Chen NF(陈诺夫); Liu L; Zhang XW; Wu JL; Yin ZG; Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
发表期刊	Journal of Crystal Growth
	2007
卷号	304 期号:2 页码:472-475
ISSN	0022-0248
摘要	The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.
关键词	Crystal Structure Liquid-phase Epitaxy Semiconducting Iii-v Materials Molecular-beam Epitaxy Transport-properties Inas1-xsbx Alloys Inassb Insb Gap Photoluminescence Inasxsb1-x/gaas Superlattices
DOI	10.1016/j.jcrysgro.2007.03.011
收录类别	SCI
语种	英语
WOS记录号	WOS:000247419600030
关键词[WOS]	MOLECULAR-BEAM EPITAXY ; TRANSPORT-PROPERTIES ; INAS1-XSBX ; ALLOYS ; INASSB ; INSB ; GAP ; PHOTOLUMINESCENCE ; INASXSB1-X/GAAS ; SUPERLATTICES
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/33953
专题	力学所知识产出(1956-2008)
通讯作者	Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Gao FB,Chen NF,Liu L,et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy[J]. Journal of Crystal Growth,2007,304,2,:472-475.
APA	Gao FB.,陈诺夫.,Liu L.,Zhang XW.,Wu JL.,...&Gao, FB .(2007).InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy.Journal of Crystal Growth,304(2),472-475.
MLA	Gao FB,et al."InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy".Journal of Crystal Growth 304.2(2007):472-475.

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