硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性

IMECH-IR > 力学所知识产出(1956-2008)

	硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性
	张玉峰; 杜永昌; 李大军; 李元恒
Source Publication	北京大学学报(自然科学版)
	1984
Volume	20 Issue:5 Pages:8-12
ISSN	0479-8023
Abstract	本文研究了硅中高温扩散硼和磷样品在CW-CO_2激光作用下薄层电阻、载流子面密度、迁移率和表面薄层(450)载流子浓度的变化。经过激光处理后样品表面一薄层载流子浓度超过了杂质的固溶度极限。通过高温热退火和再次激光辐照研究了“超固溶度”的不稳定性。同时对样品的正面和背面激光辐照对载流子的电激活效果作了比较。
Keyword	薄层电阻电激活扩散杂质扩硼激光辐照辐照后固溶度极限 Co_2激光面密度
Language	中文
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/37622
Collection	力学所知识产出(1956-2008)
Corresponding Author	张玉峰
Recommended Citation GB/T 7714	张玉峰,杜永昌,李大军,等. 硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性[J]. 北京大学学报(自然科学版),1984,20,5,:8-12.
APA	张玉峰,杜永昌,李大军,&李元恒.(1984).硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性.北京大学学报(自然科学版),20(5),8-12.
MLA	张玉峰,et al."硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性".北京大学学报(自然科学版) 20.5(1984):8-12.

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