强CO_2激光退火时离子注入Si的光学性质

IMECH-IR > 力学所知识产出(1956-2008)

	强CO_2激光退火时离子注入Si的光学性质
	李元恒; 王振明
Source Publication	光学学报
	1982
Volume	2 Issue:3 Pages:285-288
ISSN	0253-2239
Abstract	本文测量了砷离子(As~+)注入的Si在连续CO_2激光辐照下光的椭圆偏振参数、反射率、表面薄层电阻率随时间的变化。从(?)、△、R、ρ的变化看出Si注入层的激光退火是在一定的时间、温度条件下迅速完成的。
Keyword	离子注入光学性质激光退火 Co_2激光注入层激光辐照椭圆偏振光样片反射率
Language	中文
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/37986
Collection	力学所知识产出(1956-2008)
Corresponding Author	李元恒
Recommended Citation GB/T 7714	李元恒,王振明. 强CO_2激光退火时离子注入Si的光学性质[J]. 光学学报,1982,2,3,:285-288.
APA	李元恒,&王振明.(1982).强CO_2激光退火时离子注入Si的光学性质.光学学报,2(3),285-288.
MLA	李元恒,et al."强CO_2激光退火时离子注入Si的光学性质".光学学报 2.3(1982):285-288.

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