扩硼Si在连续CO_2激光辐照后的特性

IMECH-IR > 力学所知识产出(1956-2008)

	扩硼Si在连续CO_2激光辐照后的特性
	李元恒; 张玉峰; 吴书祥; 杜永昌
Source Publication	半导体学报
	1982
Volume	3 Issue:4 Pages:340-342
ISSN	0253-4177
Abstract	本文研究了高温高浓度扩硼Si在连续CO_2激光辐照后表面薄层电阻随激光功率密度和扫描速度的变化.实验发现,一定功率密度和扫描速度的CO_2激光辐照可使扩硼Si的载流子面密度提高到原来的一倍半到三倍左右.
Keyword	连续co_2激光激光辐照薄层电阻扩硼激光功率密度辐照后激光扫描速度电激活面密度
Language	中文
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/38034
Collection	力学所知识产出(1956-2008)
Corresponding Author	李元恒
Recommended Citation GB/T 7714	李元恒,张玉峰,吴书祥,等. 扩硼Si在连续CO_2激光辐照后的特性[J]. 半导体学报,1982,3,4,:340-342.
APA	李元恒,张玉峰,吴书祥,&杜永昌.(1982).扩硼Si在连续CO_2激光辐照后的特性.半导体学报,3(4),340-342.
MLA	李元恒,et al."扩硼Si在连续CO_2激光辐照后的特性".半导体学报 3.4(1982):340-342.

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