强激光辐照下集成电路Si片的椭圆偏振光研究

IMECH-IR > 力学所知识产出(1956-2008)

	强激光辐照下集成电路Si片的椭圆偏振光研究
	李元恒; 王振明
Source Publication	中国激光
	1982
Issue	5 Pages:82
ISSN	0258-7025
Abstract	<正> 用强激光辐照的方法对集成电路用的离子注入Si进行退火是近几年大力研究的一个问题。至今为止绝大多数的激光退火都是采用红宝石、YAG、氩离子等波长较短的激光器。实验虽已证实CO_2激光的退火效果完全可与其他激光比美,然而研究者甚少,且基本上限于最后结果的观测。激光作为电磁波,其趋肤深度
Keyword	Si片椭圆偏振光强激光辐照时间激光退火集成电路样片激光辐照离子注入
Language	中文
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/38076
Collection	力学所知识产出(1956-2008)
Corresponding Author	李元恒
Recommended Citation GB/T 7714	李元恒,王振明. 强激光辐照下集成电路Si片的椭圆偏振光研究[J]. 中国激光,1982,5,:82.
APA	李元恒,&王振明.(1982).强激光辐照下集成电路Si片的椭圆偏振光研究.中国激光(5),82.
MLA	李元恒,et al."强激光辐照下集成电路Si片的椭圆偏振光研究".中国激光 .5(1982):82.

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