硅基MEMS技术

IMECH-IR > 力学所知识产出(1956-2008)

	硅基MEMS技术
	郝一龙; 张立宪; 李婷; 张大成
Source Publication	机械强度
	2001-12-30
Volume	23 Issue:4 Pages:523-526
Abstract	结合MEMS技术的发展历史 ,概括了当今硅基MEMS加工技术的发展方向。指出表面牺牲层技术和体硅加工技术是硅基MEMS加工技术的两条发展主线 ;表面牺牲层技术向多层、集成化方向发展 ;体硅工艺主要表现为键合与深刻蚀技术的组合 ,追求大质量块和低应力以及三维加工。SOI技术是新一代的体硅工艺发展方向 ;标准化加工是MEMS研究的重要手段
Keyword	微电子机械系统牺牲层体硅工艺深刻蚀
Language	中文
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/40522
Collection	力学所知识产出(1956-2008)
Corresponding Author	郝一龙
Recommended Citation GB/T 7714	郝一龙,张立宪,李婷,等. 硅基MEMS技术[J]. 机械强度,2001,23,4,:523-526.
APA	郝一龙,张立宪,李婷,&张大成.(2001).硅基MEMS技术.机械强度,23(4),523-526.
MLA	郝一龙,et al."硅基MEMS技术".机械强度 23.4(2001):523-526.

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