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中频对靶反应磁控溅射Al_2O_3、TiO_2、ZrO_2功能薄膜的特性研究
贾军伟; 潘文霞; 黄河激
Source Publication新技术新工艺
2008-08-25
Issue8Pages:101-104+4
Abstract利用中频对靶磁控溅射技术,分别制备出厚度低于5μm、表面光滑的TiO2、ZrO2、Al2O33种功能薄膜。研究了不同工艺条件下薄膜的成膜速率和表面形貌,用四探针法测量了材料的薄膜电阻,并表征了膜层材料在大气压热等离子射流急速加热条件下的抗热冲击特性。
Keyword功能薄膜 磁控溅射 薄膜电阻
Language中文
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/41506
Collection力学所知识产出(1956-2008)
Corresponding Author贾军伟
Recommended Citation
GB/T 7714		 贾军伟,潘文霞,黄河激. 中频对靶反应磁控溅射Al_2O_3、TiO_2、ZrO_2功能薄膜的特性研究[J]. 新技术新工艺,2008,8,:101-104+4.
APA 贾军伟,潘文霞,&黄河激.(2008).中频对靶反应磁控溅射Al_2O_3、TiO_2、ZrO_2功能薄膜的特性研究.新技术新工艺(8),101-104+4.
MLA 贾军伟,et al."中频对靶反应磁控溅射Al_2O_3、TiO_2、ZrO_2功能薄膜的特性研究".新技术新工艺 .8(2008):101-104+4.
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