Understanding large plastic deformation of SiC nanowires at room temperature | |
Wang J(王军); Lu C; Wang Q; Xiao P(肖攀); Ke FJ(柯孚久); Bai YL(白以龙); Shen YG; Liao XZ; Gao HJ(高华健); Wang, J (reprint author), Curtin Univ, Dept Mech Engn, Perth, WA 6845, Australia | |
Source Publication | EPL |
2011 | |
Volume | 95Issue:6Pages:63003 |
ISSN | 0295-5075 |
Abstract | Tensile behaviors of SiC [111] nanowires with various possible microstructures have been investigated by molecular-dynamics simulations. The results show that the large plastic deformation in these nanowires is induced by the anti-parallel sliding of 3C grains along an ultrathin intergranular amorphous film parallel to the (11 (1) over bar) plane and inclined at an angle of 19.47 degrees. with respect to the nanowire axis. The resulting large plastic deformation of SiC nanowires at room temperature is attributed to the stretching, breaking and re-forming of Si-C bonds in the intergranular amorphous film, which is also evident from the sawtooth jumps in the stress-strain response. Copyright (C) EPLA, 2011 |
Keyword | Silicon-carbide Nanocrystalline Amorphization Ceramics Dynamics |
Subject Area | Physics |
DOI | 10.1209/0295-5075/95/63003 |
URL | 查看原文 |
Indexed By | SCI |
Language | 英语 |
WOS ID | WOS:000294996600014 |
WOS Keyword | SILICON-CARBIDE ; NANOCRYSTALLINE ; AMORPHIZATION ; CERAMICS ; DYNAMICS |
WOS Research Area | Physics |
WOS Subject | Physics, Multidisciplinary |
Funding Organization | This work was supported by the Australian Research Council (Grant No. DP0985450), the National Natural Science Foundation of China (Grant Nos. 10732090, 10932011, 11072014, 10972218 and 11021262) and the National Basic Research Program of China (2007CB814803). Computations were performed on computer clusters at the CNIC supercomputing Center, iVEC through the use of advanced computing resources located at iVEC@ARRC and on parallel clusters acquired through the WCU program in the School of Mechanical and Aerospace Engineering at SNU. |
Department | LNM材料的分子/细观统计力学行为 |
Classification | 二类/Q2 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/44911 |
Collection | 非线性力学国家重点实验室 |
Corresponding Author | Wang, J (reprint author), Curtin Univ, Dept Mech Engn, Perth, WA 6845, Australia |
Recommended Citation GB/T 7714 | Wang J,Lu C,Wang Q,et al. Understanding large plastic deformation of SiC nanowires at room temperature[J]. EPL,2011,95,6,:63003. |
APA | Wang J.,Lu C.,Wang Q.,Xiao P.,Ke FJ.,...&Wang, J .(2011).Understanding large plastic deformation of SiC nanowires at room temperature.EPL,95(6),63003. |
MLA | Wang J,et al."Understanding large plastic deformation of SiC nanowires at room temperature".EPL 95.6(2011):63003. |
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