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Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination
Su RG(苏瑞巩); Liu HB; Kong T; Song Q; Li N(李宁); Jin G(靳刚); Cheng GS; Cheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China
Source PublicationLangmuir
2011
Volume27Issue:21Pages:13220-13225
ISSN0743-7463
AbstractWe report a facile route to reversibly tune surface wettability of In(x)Ga((1-x))N (InGaN) nanotip arrays by octyl-phosphonic acid (OPA) modification and ultraviolet-visible (UV-vis) light illuminations. Well aligned InGaN nanotip arrays were grown by chemical vapor deposition (CVD). OPA was covalently attached to the InGaN nanotip surface, which was initially oxidized in Piranha solution. Because of the high surface energy of polar groups, OPA-coated InGaN nanotip arrays demonstrated superhydrophobic properties (contact angle of 154 degrees). Transitions between superhydrophobicity and hydrophilicity were obtained through OPA adsorption and UV-vis light illumination. The LnGaN nanotip surface chemistry was further characterized by X-ray photoelectron spectroscopy (XPS), which suggested a scission mechanism at P-C and MO-P (M = In and Ga) bonds of bound OPA molecules. Meanwhile, no significant surface degradation was observed after the OPA modification and phototreatments.
KeywordSelf-assembled Monolayers Nanowire Arrays Gallium Nitride Thin-films Tio2 Gan Water Zno Irradiation Conversion
Subject AreaChemistry ; Materials Science
DOI10.1021/la203072n
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000296211800057
Funding OrganizationThis work was partially funded by the Key Program of the National Science Foundation of China (Award 10834004) and the China Postdoctoral Science Foundation (20100471393). We are grateful for the professional services of Platforms of Characterization and Test and the Nanofabrication Facility at the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences. We thank Professor Xuefeng Gao for the measurements of water CAs, Dr. Qi Zhang and Dr. Youpin Gong for helpful discussion, and Dr. Beibei Zhang for assisting in XPS measurements.
DepartmentNML纳米生物光学
Classification一类
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Cited Times:20[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/45067
Collection微重力重点实验室
Corresponding AuthorCheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China
Recommended Citation
GB/T 7714
Su RG,Liu HB,Kong T,et al. Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination[J]. Langmuir,2011,27,21,:13220-13225.
APA 苏瑞巩.,Liu HB.,Kong T.,Song Q.,李宁.,...&Cheng, GS .(2011).Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination.Langmuir,27(21),13220-13225.
MLA 苏瑞巩,et al."Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination".Langmuir 27.21(2011):13220-13225.
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