| Numerical simulation of ammonothermal growth processes of GaN crystals | |
Jiang YN(姜燕妮); Chen QS(陈启生) ; Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
| |
| Source Publication | Journal of Crystal Growth
 |
| 2011 | |
| Volume | 318Issue:1Pages:411-414 |
| ISSN | 0022-0248 |
| Abstract | Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonothermal growth of GaN crystal of 1 in. size in a cylindrical high-pressure autoclave and discussed the effects of the different baffle design. We can conclude that, under the condition of forward solubility, the small opening is not in favor of the crystal growth. When the opening increases from 12% to 16%, the flow direction in the central hole changes from positive to negative. In the cases of 16% and 20% openings the flow in the autoclave exhibits a steady circulation, so the growth is stable. The transfer of raw material depends on the baffle opening and the temperature difference between growth zone and dissolving zone. (C) 2010 Elsevier B.V. All rights reserved. |
| Keyword | Convection Fluid Flow Growth Models Ammonothermal Growth Gan Single-crystals Gallium Nitride Heat-transfer Fluid-flow |
| Subject Area | Crystallography ; Materials Science ; Physics |
| DOI | 10.1016/j.jcrysgro.2010.10.218 |
| URL | 查看原文 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000289653900085 |
| WOS Keyword | SINGLE-CRYSTALS ; GALLIUM NITRIDE ; HEAT-TRANSFER ; FLUID-FLOW |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Department | NML流动稳定性与复杂流动 |
| Classification | 二类/Q2 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/45096 |
| Collection | 微重力重点实验室 |
| Corresponding Author | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China |
| Recommended Citation GB/T 7714 | Jiang YN,Chen QS,Prasad V,et al. Numerical simulation of ammonothermal growth processes of GaN crystals[J]. Journal of Crystal Growth,2011,318,1,:411-414. |
| APA | 姜燕妮,陈启生,Prasad V,&Chen, QS .(2011).Numerical simulation of ammonothermal growth processes of GaN crystals.Journal of Crystal Growth,318(1),411-414. |
| MLA | 姜燕妮,et al."Numerical simulation of ammonothermal growth processes of GaN crystals".Journal of Crystal Growth 318.1(2011):411-414. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| SCI-J2011164.pdf（511KB） | 开放获取 | -- | View Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment