| Design and optimization of a monolithic GaInP/GaInAs tandem solar cell | |
Zhang H(张汉); Chen NF(陈诺夫) ; Wang Y(汪宇); Yin ZG(尹志岗); Zhang XW(张兴旺); Shi HW(施辉伟); Wang YS(王彦硕); Huang TM(黄添懋)
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| Source Publication | 半导体学报
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| 2010 | |
| Volume | 31Issue:8Pages:084009 |
| Abstract | We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%（300 suns,AM1.5d） for the optimal structure parameter（1550 nm GaInP top and 5500 nm GaInAs bottom）,showing promising application prospects due to its acceptable lattice-mismatch（0.43%） to the GaAs substrate. |
| Keyword | Ⅲ-ⅴsemiconductor Photovoltaic Tandem Solar Cell Theoretical Efficiency |
| Subject Area | 微重力流体力学 |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/45692 |
| Collection | 微重力重点实验室 |
| Recommended Citation GB/T 7714 | Zhang H,Chen NF,Wang Y,et al. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. 半导体学报,2010,31,8,:084009. |
| APA | 张汉.,陈诺夫.,汪宇.,尹志岗.,张兴旺.,...&黄添懋.(2010).Design and optimization of a monolithic GaInP/GaInAs tandem solar cell.半导体学报,31(8),084009. |
| MLA | 张汉,et al."Design and optimization of a monolithic GaInP/GaInAs tandem solar cell".半导体学报 31.8(2010):084009. |
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