Molecular dynamics simulation of deposition and growth of cu thin film on si substrate

	Molecular dynamics simulation of deposition and growth of cu thin film on si substrate
	Zhang J(张俊); Liu C(刘崇); Shu YH(舒勇华); Fan J(樊菁); Zhang, J (reprint author), Chinese Acad Sci, State Key Lab High Temp Gas Dynam, Inst Mech, Beijing 100190, Peoples R China.
会议录名称	28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2
	2012
页码	919-925
会议名称	28th International Symposium on Rarefied Gas Dynamics (RGD)
会议日期	JUL 09-13, 2012
会议地点	Zaragoza, SPAIN
摘要	Growth and properties of Cu thin film deposited on Si substrate is studied using molecular dynamics method. Tersoff potential parameters for the interaction between Cu and Si are fitted to reproduce the lattice structure of copper silicide. We focus on the growth mode, crystalline structure and orientation, and surface morphology of Cu thin film. The effect of substrate temperature on the crystalline orientation and surface roughness is studied.
关键词	Thin Film Growth Crystalline Structure And Orientation Surface Roughness Molecular Dynamics Embedded-atom Method Surfaces Systems Metals
课题组名称	LHD微尺度和非平衡流动
ISBN号	978-0-7354-1115-9
URL	查看原文
收录类别	CPCI
语种	英语
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/46815
专题	高温气体动力学国家重点实验室
通讯作者	Zhang, J (reprint author), Chinese Acad Sci, State Key Lab High Temp Gas Dynam, Inst Mech, Beijing 100190, Peoples R China.
推荐引用方式 GB/T 7714	Zhang J,Liu C,Shu YH,et al. Molecular dynamics simulation of deposition and growth of cu thin film on si substrate[C]28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2,2012:919-925.

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