Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

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	Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
	Wu K; Zhang YY; Wei TB; Lan D(蓝鼎); Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
发表期刊	AIP ADVANCES
	2013-09
卷号	3 期号:9 页码:092124/1-092124/7
ISSN	2158-3226
摘要	The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.
关键词	Led Gan Efficiency Atomic Force Microscope(Afm)
学科领域	交叉与边缘领域的力学
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000325282900024
项目资助者	National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A105, 2011AA03A103]
课题组名称	NML空间材料物理力学
论文分区	Q3
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/47503
专题	微重力重点实验室
通讯作者	Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3,9,:092124/1-092124/7.
APA	Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Wei, TB .(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3(9),092124/1-092124/7.
MLA	Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3.9(2013):092124/1-092124/7.

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