| Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography | |
Wu K ; Zhang YY; Wei TB; Lan D(蓝鼎); Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
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| Source Publication | AIP ADVANCES
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| 2013-09 | |
| Volume | 3Issue:9Pages:092124/1-092124/7 |
| ISSN | 2158-3226 |
| Abstract | The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results. |
| Keyword | Led Gan Efficiency Atomic Force Microscope(Afm) |
| Subject Area | 交叉与边缘领域的力学 |
| URL | 查看原文 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000325282900024 |
| Funding Organization | National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A105, 2011AA03A103] |
| Department | NML空间材料物理力学 |
| Classification | Q3 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/47503 |
| Collection | 微重力重点实验室 |
| Corresponding Author | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3,9,:092124/1-092124/7. |
| APA | Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Wei, TB .(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3(9),092124/1-092124/7. |
| MLA | Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3.9(2013):092124/1-092124/7. |
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