| Improvement of the thermal design in the SiC PVT growth process | |
Yan JY(颜君毅) ; Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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| Source Publication | JOURNAL OF CRYSTAL GROWTH |
| 2014 | |
| Pages | 34-37 |
| Conference Name | 7th International Workshop on Modeling in Crystal Growth |
| Conference Date | OCT 28-31, 2012 |
| Conference Place | Taipei,TW, China |
| Abstract | The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown. |
| Keyword | Fluid Flows Mass Transfer Growth From Vapor Semiconducting Silicon Compounds |
| Department | 中科院国家微重力实验室 |
| Funding Organization | Natl Taiwan Univ, Natl Cent Univ, Natl Sci Council Taiwan, Japanese Soc Promot Sci, German Assoc Crystal Growth;HO= |
| URL | 查看原文 |
| Indexed By | CPCI-S |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/48259 |
| Collection | 微重力重点实验室 |
| Corresponding Author | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China. |
| Recommended Citation GB/T 7714 | Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[C]JOURNAL OF CRYSTAL GROWTH,2014:34-37. |
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