| Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography |
| Wu K(吴奎); Wei TB(魏同波); Zheng HY(郑海洋); Lan D(蓝鼎) ; Wei, XC; Hu, Q; Lu, HX; Wang JX(王军喜); Luo Y(罗毅); Li JM(李晋闽); Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
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| Source Publication | JOURNAL OF APPLIED PHYSICS
(IF:2.328[JCR-2018],2.224[5-Year]) |
| 2014-03-28
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| Volume | 115Issue:12Pages:123101 |
| ISSN | 0021-8979
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| Abstract | A novel nanopattern technique of nanospherical-lens photolithography is introduced to fabricate the InGaN nanopyramid white (NPW) light-emitting diodes (LEDs) by selective area growth. Highly ordered NPW LED arrays are achieved after optimizing the growth conditions. It is found that the NPW LEDs vary from warm white light to cool with the increase in growth temperature. For the cool white NPW LEDs, the spectrum is similar to the conventional white LEDs obtained from the blue LEDs combined with yellow phosphors. The blue emission originates from the upper sidewalls of nanopyramids, and yellow light is mainly emitted from the lower ridges with respect to the base of nanopyramids. Furthermore, simulation shows that the light extraction efficiency of NPW LEDs is about 4 times higher compared with conventional ones, and the escape cone is as much as 85 degrees due to their three-dimensional nanopyramid structures. These observations suggest that the proposed phosphor-free NPW LEDs may have great potential for highly efficient white lighting. (C) 2014 AIP Publishing LLC. |
| Keyword | Quantum-wells
Nonpolar
Extraction
Efficiency
Prospects
Emission
Nanorod
Facets
Arrays
Layers
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| Subject Area | Physics
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| URL | 查看原文
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| Indexed By | SCI
; EI
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| Language | 英语
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| WOS ID | WOS:000333901100001
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| Funding Organization | This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61274040 and 51102226, the National Basic Research Program of China under Grant No. 2011CB301902, the National High Technology Program of China under Grant No. 2014AA032605 and Youth Innovation Promotion Association, Chinese Academy of Sciences.
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| Department | NML空间材料物理力学
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| Classification | 二类/Q2
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| Citation statistics |
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| Document Type | 期刊论文
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| Identifier | http://dspace.imech.ac.cn/handle/311007/48793
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| Collection | 微重力重点实验室
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| Corresponding Author | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China. |
Recommended Citation
GB/T 7714 |
Wu K,Wei TB,Zheng HY,et al. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography[J]. JOURNAL OF APPLIED PHYSICS,2014,115,12,:123101.
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| APA |
吴奎.,魏同波.,郑海洋.,蓝鼎.,Wei, XC.,...&Wei, TB .(2014).Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography.JOURNAL OF APPLIED PHYSICS,115(12),123101.
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| MLA |
吴奎,et al."Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography".JOURNAL OF APPLIED PHYSICS 115.12(2014):123101.
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