| Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography | |
Wu K(吴奎); Wei TB(魏同波); Lan D(蓝鼎) ; Zheng HY(郑海洋); Wang JX(王军喜); Luo Y(罗毅); Li JM(李晋闽); Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
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| Source Publication | Chinese Physics B
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| 2014-02 | |
| Volume | 23Issue:2Pages:28504 |
| ISSN | 1674-1056 |
| Abstract | Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures. |
| Keyword | Light-emitting-diodes High-extraction-efficiency Blue Improvement |
| Subject Area | Physics |
| URL | 查看原文 |
| Indexed By | SCI ; EI ; CSCD |
| Language | 英语 |
| WOS ID | WOS:000332104800098 |
| Funding Organization | Project supported by the National Basic Research Program of China (Grant No. 2011CB301902). |
| CSCD ID | CSCD:5044725 |
| Department | NML空间材料物理力学 |
| Classification | 二类/Q2 |
| Citation statistics |
Cited Times:6[CSCD]
[CSCD Record]
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| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/48794 |
| Collection | 微重力重点实验室 |
| Corresponding Author | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Wu K,Wei TB,Lan D,et al. Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography[J]. Chinese Physics B,2014,23,2,:28504. |
| APA | Wu K.,Wei TB.,Lan D.,Zheng HY.,Wang JX.,...&Wei, TB .(2014).Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography.Chinese Physics B,23(2),28504. |
| MLA | Wu K,et al."Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography".Chinese Physics B 23.2(2014):28504. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| IMCAS-J2014-074.pdf（589KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
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