| Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions | |
Chen XF(陈晓锋); Chen NF(陈诺夫) ; Wu JL(吴金良); Zhang XL(张秀兰); Chai CL(柴春林); Yu YD(俞育德)
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| Source Publication | 半导体学报
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| 2009 | |
| Issue | 8Pages:47-51 |
| Abstract | A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striati... |
| Keyword | Chemical Etching Etch Pit Defect Growth Striations Convection |
| Indexed By | EI |
| Language | 英语 |
| Funding Organization | supported by the Space Agency of China and the Chinese Academy of Sciences |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/55142 |
| Collection | 微重力重点实验室 |
| Recommended Citation GB/T 7714 | Chen XF,Chen NF,Wu JL,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009,8,:47-51. |
| APA | 陈晓锋,陈诺夫,吴金良,张秀兰,柴春林,&俞育德.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报(8),47-51. |
| MLA | 陈晓锋,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 .8(2009):47-51. |
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| jcnkiadd182.pdf（393KB） | 开放获取 | CC BY-ND | View Download | |||
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