| Simulations of dislocation density in silicon carbide crystals grown by the PVT-method | |
Chen QS(陈启生)1,2,3 ; Zhu P(朱鹏)1,3; He M(何蒙)1,3
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| Corresponding Author | Chen, Qi-Sheng([email protected]) |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
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| 2020-02-01 | |
| Volume | 531Pages:6 |
| ISSN | 0022-0248 |
| Abstract | The Alexander-Haasen (AH) model has been applied to analyze the plastic deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon carbide). Plastic parameters are obtained by fitting the predicted curves to the experimental data on the plastic deformation of alpha-SiC crystals under uniaxial compression. The relationship between the activity energy (Q) and stress exponent (n) is considered when using the AH model. This relationship explicitly represents two deformation mechanisms around the critical temperature. The ratio of the activity energy and stress exponent, Q/n, equals 0.3 eV when the temperature is below the transition temperature, and 1.3 eV when the temperature is above the transition temperature. Then, the model is used to predict the dislocation density and thermal stresses in the crystals. The largest dislocation density is found to occur near the graphite/SiC interface, and the dislocation density gradually decreases with the thickness of the ingot. |
| Keyword | Computer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds |
| DOI | 10.1016/j.jcrysgro.2019.125380 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000504205900044 |
| WOS Keyword | SIC SINGLE-CRYSTALS ; PLASTIC BEHAVIOR ; ACTIVATION PARAMETERS ; NUMERICAL-SIMULATION ; SUBLIMATION GROWTH ; DYNAMICS ; GLIDE |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Funding Project | National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015] |
| Funding Organization | National Natural Science Foundation of China |
| Classification | Q3 |
| Ranking | 1 |
| Contributor | Chen, Qi-Sheng |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/81253 |
| Collection | 微重力重点实验室 |
| Affiliation | 1.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China |
| Recommended Citation GB/T 7714 | Chen QS,Zhu P,He M. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:6.Rp_Au:Chen, Qi-Sheng |
| APA | 陈启生,朱鹏,&何蒙.(2020).Simulations of dislocation density in silicon carbide crystals grown by the PVT-method.JOURNAL OF CRYSTAL GROWTH,531,6. |
| MLA | 陈启生,et al."Simulations of dislocation density in silicon carbide crystals grown by the PVT-method".JOURNAL OF CRYSTAL GROWTH 531(2020):6. |
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| Jp2020058.pdf（963KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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