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Efficient and Reliable Nanoindentation Simulation by Dislocation Loop Erasing Method
Shuang F(双飞)1,2; Xiao P(肖攀)1; Bai YL(白以龙)1
Source PublicationACTA MECHANICA SOLIDA SINICA
2020-07-06
Pages14
ISSN0894-9166
AbstractNanoindentation is a useful technique to measure material properties at microscopic level. However, the intrinsically multiscale nature makes it challenging for large-scale simulations to be carried out. It is shown that in molecular statics simulations of nanoindentation, the separated dislocation loops (SDLs) are trapped in simulation box which detrimentally affects the plastic behavior in the plastic zone (PZ); and the long-distance propagation of SDLs consumes much computational cost yet with little contribution to the variation of tip force. To tackle the problem, the dislocation loop erasing (DLE) method is proposed in the work to alleviate the influence of artificial boundary conditions on the SDL-PZ interaction and improve simulation efficiency. Simulation results indicate that the force-depth curves obtained from simulations with and without DLE are consistent with each other, while the method with DLE yields more reasonable results of microstructural evolution and shows better efficiency. The new method provides an alternative approach for large-scale molecular simulation of nanoindentation with reliable results and higher efficiency and also sheds lights on improving existing multiscale methods.
KeywordNanoindentation Dislocation loops Boundary effects Molecular statics
DOI10.1007/s10338-020-00175-y
Indexed BySCI ; EI ; CSCD
Language英语
WOS IDWOS:000545938800001
WOS KeywordMOLECULAR-DYNAMICS SIMULATION ; ATOMISTIC SIMULATIONS ; INCIPIENT PLASTICITY ; INDENTATION ; NUCLEATION ; METALS ; SINGLE
WOS Research AreaMaterials Science ; Mechanics
WOS SubjectMaterials Science, Multidisciplinary ; Mechanics
Funding OrganizationNational Natural Science Foundation of China[11790292] ; National Natural Science Foundation of China[11672298] ; National Natural Science Foundation of China[11432014] ; Strategic Priority Research Program (B) of the Chinese Academy of Sciences[XDB22040501]
ClassificationQ3
Ranking1
ContributorXiao, Pan
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/84751
Collection非线性力学国家重点实验室
Affiliation1.Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China;
2.Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
Recommended Citation
GB/T 7714
Shuang F,Xiao P,Bai YL. Efficient and Reliable Nanoindentation Simulation by Dislocation Loop Erasing Method[J]. ACTA MECHANICA SOLIDA SINICA,2020:14.Rp_Au:Xiao, Pan
APA 双飞,肖攀,&白以龙.(2020).Efficient and Reliable Nanoindentation Simulation by Dislocation Loop Erasing Method.ACTA MECHANICA SOLIDA SINICA,14.
MLA 双飞,et al."Efficient and Reliable Nanoindentation Simulation by Dislocation Loop Erasing Method".ACTA MECHANICA SOLIDA SINICA (2020):14.
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