| Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors | |
Wang JD(王俊刁)1,2; Ning HR3; Wang J(王军)1 ; Kershaw SV4,5; Jing LH3; Xiao P(肖攀)1
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| Corresponding Author | Jing, Lihong([email protected]) ; Xiao, Pan([email protected]) |
| Source Publication | ACS APPLIED NANO MATERIALS
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| 2022-04-05 | |
| Volume | 5Issue:4Pages:5617-5624 |
| Abstract | Semiconductor quantum dots (QDs) are promising materials for stress/strain sensing applications owing to their pressure-dependent photoluminescence (PL) and nanoscale size, while the impact of stress and microstructure on their optical properties still awaits in-depth investigations under more realistic loading conditions. Herein, bare CuInS2 QDs and core- shell structured CuInS2/ZnS QDs are investigated under repetitive pressure loadings to elucidate the pressure-dependent PL responses over many pressure cycles. The CuInS2/ZnS QDs not only show higher PL intensity but also exhibit a reliable and simple relationship between PL emission peak energy (E-PL) and external pressure (P), which is desirable for actual application in stress/strain sensing. Specifically, the E-PL-P relationship of bare CuInS2 QDs changes after the first loading-unloading cycle, while the EPL-P relationship of CuInS2/ZnS QDs shows repeatable trajectories under different cycles. This research provides experimental support for designing QD-based stress/ strain sensing materials and explains how the shell and surface microstructure will affect the mechanical-luminescence responses of |
| Keyword | CuInS2 quantum dots core shell structure repetitive loading stress strain sensing photoluminescence properties |
| DOI | 10.1021/acsanm.2c00573 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000813096700001 |
| WOS Keyword | VI SEMICONDUCTOR NANOCRYSTALS ; SOLID PHASE-TRANSITION ; STRUCTURAL TRANSFORMATIONS ; SIZE DEPENDENCE ; LUMINESCENCE |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| Funding Project | National Natural Science Foundation of China (NSFC)[11790292] ; National Natural Science Foundation of China (NSFC)[11672298] ; National Natural Science Foundation of China (NSFC)[22177115] ; NSFC[11988102] ; Youth Innovation Promotion Association CAS[2018042] ; National Key Research Program of China[2018YFA0208800] |
| Funding Organization | National Natural Science Foundation of China (NSFC) ; NSFC ; Youth Innovation Promotion Association CAS ; National Key Research Program of China |
| Classification | 二类 |
| Ranking | 1 |
| Contributor | Jing, Lihong ; Xiao, Pan |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/89301 |
| Collection | 非线性力学国家重点实验室 |
| Affiliation | 1.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China; 3.Chinese Acad Sci, Inst Chem, Key Lab Colloid Interface & Chem Thermodynam, Beijing 100190, Peoples R China; 4.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 99077, Peoples R China; 5.City Univ Hong Kong, Ctr Funct Photon, Kowloon, Hong Kong 99077, Peoples R China |
| Recommended Citation GB/T 7714 | Wang JD,Ning HR,Wang J,et al. Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors[J]. ACS APPLIED NANO MATERIALS,2022,5,4,:5617-5624.Rp_Au:Jing, Lihong, Xiao, Pan |
| APA | 王俊刁,Ning HR,王军,Kershaw SV,Jing LH,&肖攀.(2022).Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors.ACS APPLIED NANO MATERIALS,5(4),5617-5624. |
| MLA | 王俊刁,et al."Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors".ACS APPLIED NANO MATERIALS 5.4(2022):5617-5624. |
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| Jp2022FA431.pdf（2845KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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