Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth

doi:10.3390/nano13081382

IMECH-IR > 非线性力学国家重点实验室

	Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth
	Peng Q(彭庆); Ma ZW(马知未); Cai, Shixian ; Zhao S(赵帅); Chen, Xiaojia ; Cao, Qiang
发表期刊	NANOMATERIALS
	2023-04
卷号	13 期号:8 页码:1382
摘要	Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The quality of thin films greatly affects their performance in applications in electronics and optoelectronics, whereas optimizing the growth conditions for high quality is a great challenge. Herein, we have investigated the process parameters for the growth of AlGaN thin films via molecular dynamics simulations. The effects of annealing temperature, the heating and cooling rate, the number of annealing rounds, and high temperature relaxation on the quality of AlGaN thin films have been examined for two annealing modes: constant temperature annealing and laser thermal annealing. Our results reveal that for the mode of constant temperature annealing, the optimum annealing temperature is much higher than the growth temperature in annealing at the picosecond time scale. The lower heating and cooling rates and multiple-round annealing contribute to the increase in the crystallization of the films. For the mode of laser thermal annealing, similar effects have been observed, except that the bonding process is earlier than the potential energy reduction. The optimum AlGaN thin film is achieved at a thermal annealing temperature of 4600 K and six rounds of annealing. Our atomistic investigation provides atomistic insights and fundamental understanding of the annealing process, which could be beneficial for the growth of AlGaN thin films and their broad applications.
关键词	AlGaN thin film molecular dynamics simulations laser annealing atomistic structure
DOI	10.3390/nano13081382
收录类别	SCI
语种	英语
WOS记录号	WOS:000979471800001
项目资助者	Shenzhen Science and Technology Program [KQTD20200820113045081] ; National Natural Science Foundation of China [51727901, XDA25040102] ; LiYing Program of the Institute of Mechanics, Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; [12272378] ; [E1Z1011001]
论文分区	二类/Q1
力学所作者排名	1
RpAuthor	Chen, XJ ; Cao, Q
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/92200
专题	非线性力学国家重点实验室
作者单位	1.(Peng Qing, Chen Xiaojia) Harbin Inst Technol Sch Sci Shenzhen 518055 Peoples R China 2.(Peng Qing, Ma Zhiwei, Zhao Shuai) Chinese Acad Sci Inst Mech State Key Lab Nonlinear Mech Beijing 100190 Peoples R China 3.(Peng Qing) Univ Chinese Acad Sci Sch Engn Sci Beijing 100049 Peoples R China 4.(Cai Shixian, Cao Qiang) Wuhan Univ Inst Technol Sci Wuhan 430072 Peoples R China
推荐引用方式 GB/T 7714	Peng Q,Ma ZW,Cai, Shixian,et al. Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth[J]. NANOMATERIALS,2023,13,8,:1382.Rp_Au:Chen, XJ, Cao, Q
APA	彭庆,马知未,Cai, Shixian,赵帅,Chen, Xiaojia,&Cao, Qiang.(2023).Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth.NANOMATERIALS,13(8),1382.
MLA	彭庆,et al."Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth".NANOMATERIALS 13.8(2023):1382.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Jp2023A187.pdf（2490KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载