| Electronic signal for mechanical failure in two-dimensional g-SiC | |
| Li, Jing1; Shi, Tan1; Lu, Chenyang1; Peng Q(彭庆)2,3,4 | |
| Corresponding Author | Shi, Tan([email protected]) ; Peng, Qing([email protected]) |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 2024-06-01 | |
| Volume | 39Issue:6Pages:5 |
| ISSN | 0268-1242 |
| Abstract | It is non-trivial to identify mechanical failure using first-principles calculations as only long-wave phonons are used in these models due to size limitations. Here, we propose a new criterion to predict the mechanical failure by electronic bandgap closure in graphene-like two-dimensional silicon carbide (g-SiC) monolayer. The electronic bandgap decreases with strain and closes beyond the ultimate strain. This mechano-electronic coupling suggests that the onset of the zero bandgap and the correlation between electronic bandgap and ultimate strain could be used to predict the ideal mechanical failure of g-SiC monolayers. |
| Keyword | instability mechanical properties electronic properties two-dimensional SiC first-principles calculations mechanical failure |
| DOI | 10.1088/1361-6641/ad40c7 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:001214209500001 |
| WOS Keyword | SILICON-CARBIDE ; AB-INITIO ; MONOLAYER ; GRAPHENE ; GEC |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| Funding Project | National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[12105219] ; National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[12272378] ; National Natural Science Foundation of China[2020B0909010003] ; High-level Innovation Research Institute Program of Guangdong Province[E1Z1011001] ; Chinese Academy of Sciences |
| Funding Organization | National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809 ; National Natural Science Foundation of China ; High-level Innovation Research Institute Program of Guangdong Province ; Chinese Academy of Sciences |
| Classification | Q3 |
| Ranking | 1 |
| Contributor | Shi, Tan ; Peng, Qing |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/95083 |
| Collection | 非线性力学国家重点实验室 |
| Affiliation | 1.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China; 2.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 4.Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China |
| Recommended Citation GB/T 7714 | Li, Jing,Shi, Tan,Lu, Chenyang,et al. Electronic signal for mechanical failure in two-dimensional g-SiC[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2024,39,6,:5.Rp_Au:Shi, Tan, Peng, Qing |
| APA | Li, Jing,Shi, Tan,Lu, Chenyang,&彭庆.(2024).Electronic signal for mechanical failure in two-dimensional g-SiC.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,39(6),5. |
| MLA | Li, Jing,et al."Electronic signal for mechanical failure in two-dimensional g-SiC".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 39.6(2024):5. |
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