| Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process | |
| Lei, Penghui1; Chang, Qing2,3; Xiao, Mingkun2,3; Ye, Chao2,3; Qi, Pan4; Shi, Fangjie5; Hang, Yuhua5; Li, Qianwu5; Peng Q(彭庆)6,7,8 | |
| Corresponding Author | Ye, Chao([email protected]) ; Peng, Qing([email protected]) |
| Source Publication | NANOMATERIALS
 |
| 2024-10-01 | |
| Volume | 14Issue:20Pages:11 |
| Abstract | A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 degrees C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. |
| Keyword | SiCf/TiC interface ion irradiation phase transformation interface cracking bubble |
| DOI | 10.3390/nano14201629 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:001342594000001 |
| WOS Keyword | M(N+1)AX(N) PHASES ; SIC FIBER ; TI3SIC2 ; STABILITY ; HELIUM |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| Funding Project | National Key R&D Program of China ; National Natural Science Foundation of China[12272378] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB0620103] ; High-level Innovation Research Institute Program of Guangdong Province[2020B0909010003] ; [2022YFB3707200] |
| Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; High-level Innovation Research Institute Program of Guangdong Province |
| Classification | 二类 |
| Ranking | 1 |
| Contributor | Ye, Chao ; Peng, Qing |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/97143 |
| Collection | 非线性力学国家重点实验室 |
| Affiliation | 1.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China; 2.Northwestern Polytech Univ, Inst Clean Energy, Yangtze River Delta Res Inst, Taicang 215400, Peoples R China; 3.Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China; 4.China Nucl Power Operat Technol Corp Ltd, Wuhan 430223, Peoples R China; 5.Suzhou Nucl Power Res Inst, Suzhou 215004, Peoples R China; 6.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 7.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 8.Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China |
| Recommended Citation GB/T 7714 | Lei, Penghui,Chang, Qing,Xiao, Mingkun,et al. Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process[J]. NANOMATERIALS,2024,14,20,:11.Rp_Au:Ye, Chao, Peng, Qing |
| APA | Lei, Penghui.,Chang, Qing.,Xiao, Mingkun.,Ye, Chao.,Qi, Pan.,...&彭庆.(2024).Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.NANOMATERIALS,14(20),11. |
| MLA | Lei, Penghui,et al."Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process".NANOMATERIALS 14.20(2024):11. |
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