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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2025, 卷号: 649, 页码: 9./通讯作者:Chen, Xue, Li, Kai
Authors:
Yan, Dongxiu
;
Guo ZY(郭子漪)
;
Chen X(陈雪)
;
Li K(李凯)
;
Zhao JF(赵建福)
;
Hu WR(胡文瑞)
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Submit date:2024/11/22
Crystal growth
Heat and mass flow
Interfacial phenomenon
Czochralski method
Kriging-based response surface method
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6./通讯作者:Chen, Qi-Sheng
Authors:
Chen QS(陈启生)
;
Zhu P(朱鹏)
;
He M(何蒙)
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Submit date:2020/03/11
Computer simulation
Defects
Heat transfer
Stresses
Growth from vapor
Semiconducting silicon compounds
Real-time in situ observation of shear modulus evolution during Ostwald ripening of colloidal crystallization
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 502, 页码: 35-40
Authors:
Zhou HW(周宏伟)
;
Xu SH(徐升华)
;
Sun ZW(孙祉伟)
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View/Download:564/124
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Submit date:2018/10/30
Colloidal crystal
Crystallization
Ostwald ripening
Shear modulus
Improvement of the thermal design in the SiC PVT growth process
期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Submit date:2014/02/13
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Improvement of the thermal design in the SiC PVT growth process
会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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View/Download:800/236
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Submit date:2014/02/24
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Role of characteristic modes in the dynamics of wave pattern in the Czochralski oxide crystal growth
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 340, 期号: 1, 页码: 190-196
Authors:
Jing CJ(敬成君)
;
Jia CX
;
Li K(李凯)
;
Arima H
;
Jing, CJ
;
Sichuan Univ, Coll Architecture & Environm, Chengdu 610064, Peoples R China.
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Submit date:2013/01/18
Characteristic Mode
Fluid Flows
Proper Orthogonal Decomposition
Wave Pattern
Czochralski Method
Oxides
Proper Orthogonal Decomposition
Melt
Flow
Convection
Simulation
Buoyancy
Force
Grids
Field
Numerical simulation of ammonothermal growth processes of GaN crystals
会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Numerical simulation of ammonothermal growth processes of GaN crystals
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
Influence Of Micro-Impurity On Protein Crystal Growth Studied By The Etch Figure Method
期刊论文
Journal of Crystal Growth, 2009, 卷号: 311, 期号: 3, 页码: 548-552
Authors:
Dai GL(戴国亮)
;
Liu XY(刘兴宇)
;
Sazaki G
;
Zhang XG
;
Dai GL
Adobe PDF(271Kb)
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View/Download:1004/230
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Submit date:2009/08/03
Biocrystallization
Etching
Impurities
Lysozyme
Egg-white Lysozyme
Macromolecular Impurities
Crystallization
Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates
期刊论文
Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:
Dai RX
;
Chen NF(陈诺夫)
;
Zhang XW
;
Dai, RX (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Submit date:2007/06/15