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Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2025, 卷号: 649, 页码: 9./通讯作者:Chen, Xue, Li, Kai
Authors:  Yan, Dongxiu;  Guo ZY(郭子漪);  Chen X(陈雪);  Li K(李凯);  Zhao JF(赵建福);  Hu WR(胡文瑞)
Favorite  |  View/Download:13/0  |  Submit date:2024/11/22
Crystal growth  Heat and mass flow  Interfacial phenomenon  Czochralski method  Kriging-based response surface method  
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6./通讯作者:Chen, Qi-Sheng
Authors:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
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Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Real-time in situ observation of shear modulus evolution during Ostwald ripening of colloidal crystallization 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 502, 页码: 35-40
Authors:  Zhou HW(周宏伟);  Xu SH(徐升华);  Sun ZW(孙祉伟)
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Colloidal crystal  Crystallization  Ostwald ripening  Shear modulus  
Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
View  |  Adobe PDF(1817Kb)  |  Favorite  |  View/Download:800/236  |  Submit date:2014/02/24
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Role of characteristic modes in the dynamics of wave pattern in the Czochralski oxide crystal growth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 340, 期号: 1, 页码: 190-196
Authors:  Jing CJ(敬成君);  Jia CX;  Li K(李凯);  Arima H;  Jing, CJ;  Sichuan Univ, Coll Architecture & Environm, Chengdu 610064, Peoples R China.
Adobe PDF(1123Kb)  |  Favorite  |  View/Download:878/217  |  Submit date:2013/01/18
Characteristic Mode  Fluid Flows  Proper Orthogonal Decomposition  Wave Pattern  Czochralski Method  Oxides  Proper Orthogonal Decomposition  Melt  Flow  Convection  Simulation  Buoyancy  Force  Grids  Field  
Numerical simulation of ammonothermal growth processes of GaN crystals 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  Favorite  |  View/Download:990/276  |  Submit date:2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  
Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  Favorite  |  View/Download:794/223  |  Submit date:2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Influence Of Micro-Impurity On Protein Crystal Growth Studied By The Etch Figure Method 期刊论文
Journal of Crystal Growth, 2009, 卷号: 311, 期号: 3, 页码: 548-552
Authors:  Dai GL(戴国亮);  Liu XY(刘兴宇);  Sazaki G;  Zhang XG;  Dai GL
Adobe PDF(271Kb)  |  Favorite  |  View/Download:1004/230  |  Submit date:2009/08/03
Biocrystallization  Etching  Impurities  Lysozyme  Egg-white Lysozyme  Macromolecular Impurities  Crystallization  
Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates 期刊论文
Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:  Dai RX;  Chen NF(陈诺夫);  Zhang XW;  Dai, RX (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  Favorite  |  View/Download:960/193  |  Submit date:2007/06/15