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| (Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition | |
Yang JL; Chen NF(陈诺夫) ; Liu ZK; Yang SY; Chai CL; Liao MY; He HJ
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| Source Publication | Journal of Crystal Growth
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| 2002 | |
| Volume | 234Issue:2-3Pages:359-363 |
| ISSN | 0022-0248 |
| Abstract | The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250°C showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga5.2Mn was obtained in the sample grown at the substrate temperature of 250°C. Ga5.2Mn, Ga5Mn8 and Mn3Ga were obtained in the sample grown at the substrate temperature of 400°C. However, there is no new phase in the sample grown at the substrate temperature of 200°C. The sample grown at 400°C was annealed at 840°C. In this annealed sample Mn3Ga disappeared, Ga5Mn8 tended to disappear, Ga5.2Mn crystallized better and a new phase of Mn2As was generated. |
| Keyword | X-ray Diffraction |
| Subject Area | 微重力流体力学 |
| DOI | 10.1016/S0022-0248(01)01722-5 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000173057500013 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/13635 |
| Collection | 力学所知识产出(1956-2008) |
| Recommended Citation GB/T 7714 | Yang JL,Chen NF,Liu ZK,et al. (Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition[J]. Journal of Crystal Growth,2002,234,2-3,:359-363. |
| APA | Yang JL.,陈诺夫.,Liu ZK.,Yang SY.,Chai CL.,...&He HJ.(2002).(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition.Journal of Crystal Growth,234(2-3),359-363. |
| MLA | Yang JL,et al."(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition".Journal of Crystal Growth 234.2-3(2002):359-363. |
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