Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure

doi:10.1016/j.jcrysgro.2005.08.043

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	Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure
	Peng CT; Chen NF(陈诺夫); Wu JL; Yin ZG; Yu YD; Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Source Publication	Journal of Crystal Growth
	2005
Volume	285 Issue:4 Pages:459-465
ISSN	0022-0248
Abstract	The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed.
Subject Area	生物力学
DOI	10.1016/j.jcrysgro.2005.08.043
Indexed By	SCI
Language	英语
WOS ID	WOS:000234164600003
WOS Keyword	MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; INAS1-XSBX ; ALLOYS ; INASSB ; INSB
WOS Research Area	Crystallography ; Materials Science ; Physics
WOS Subject	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Citation statistics	Cited Times:2[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/16075
Collection	力学所知识产出(1956-2008)
Corresponding Author	Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation GB/T 7714	Peng CT,Chen NF,Wu JL,et al. Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure[J]. Journal of Crystal Growth,2005,285,4,:459-465.
APA	Peng CT,陈诺夫,Wu JL,Yin ZG,Yu YD,&Peng, CT .(2005).Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure.Journal of Crystal Growth,285(4),459-465.
MLA	Peng CT,et al."Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure".Journal of Crystal Growth 285.4(2005):459-465.

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