Knowledge Management System of Institue of Mechanics, CAS
| Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition | |
Chen CL; Chen NF(陈诺夫) ; Liu LF; Wu JL; Liu ZK; Yang SY; Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
| |
| Source Publication | Journal of Crystal Growth
 |
| 2005 | |
| Volume | 279Issue:3-4Pages:272-275 |
| ISSN | 0022-0248 |
| Abstract | The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed; The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga1-xMnxSb samples indicate that the Ga1-xMnxSb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga1-xMnxSb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry. |
| Subject Area | 力学 |
| DOI | 10.1016/j.jcrysgro.2005.02.038 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000229686200005 |
| WOS Keyword | III-V SEMICONDUCTORS ; MAGNETOTRANSPORT PROPERTIES ; EPITAXY |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/16497 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Chen CL,Chen NF,Liu LF,et al. Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition[J]. Journal of Crystal Growth,2005,279,3-4,:272-275. |
| APA | Chen CL.,陈诺夫.,Liu LF.,Wu JL.,Liu ZK.,...&Chen, CL .(2005).Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition.Journal of Crystal Growth,279(3-4),272-275. |
| MLA | Chen CL,et al."Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition".Journal of Crystal Growth 279.3-4(2005):272-275. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| Grown on GaSb with M（184KB） | 开放获取 | -- | View Download | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment