Knowledge Management System of Institue of Mechanics, CAS
Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy | |
Liu L; Chen NF(陈诺夫); Gao FB; Yin ZQ; Cui M; Bai YM; Zhang XW | |
Source Publication | Proceedings of SPIE - The International Society for Optical Engineering |
2008 | |
Conference Name | Solid State Lighting and Solar Energy Technologies |
Conference Date | November 12, 2007 - November 14, 2007 |
Conference Place | Beijing, China |
Abstract | GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the absorbing edge, Ga 1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively. |
Keyword | Gainassb Gasb Lpe Segregation Coefficient Thermophotovoltaic Cell |
URL | 查看原文 |
Indexed By | EI |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/60316 |
Collection | 力学所知识产出(1956-2008) |
Recommended Citation GB/T 7714 | Liu L,Chen NF,Gao FB,et al. Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy[C]Proceedings of SPIE - The International Society for Optical Engineering,2008. |
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