Electronic dispersions of a stable twisted bilayer phosphorene in 2O-t alpha P phase | |
Pan DX(潘斗兴)1,2,3,4 | |
通讯作者 | Pan, Douxing([email protected]) |
发表期刊 | JOURNAL OF APPLIED PHYSICS |
2021-02-07 | |
卷号 | 129期号:5页码:12 |
ISSN | 0021-8979 |
摘要 | It is reported for the electronic properties of an in-plane twisted bilayer phosphorene, known as the 2O-t alpha P phase, and the only dynamically stable phase beyond the AB stacking. This was achieved using first-principles calculations, a generalized empirical tight-binding model inclusive of electric field effects, and a two-parameter low energy effective model, the latter two providing an efficient scheme for nanoelectronics related applications. The tight-binding model reproduces a global fit to the first-principles dispersion, and the low energy model provides more accurate near-gap bands. Both are orders-of-magnitude faster and less memory-intensive than performing first-principles calculations. The twisted 2O-t alpha P structure possesses a direct bandgap of 1.27eV, larger than that of the shifted AB structure (1.03eV). The hole and electron polar effective mass anisotropy ratios are 27.34 and 1.95, respectively. An important observation is that the layer twisting results in the removal of Dirac cones as a reflection of a different band topology compared to the AB one, while the twofold degeneracy at the Brillouin zone boundary and the symmetry of the energy surface are both broken by an external vertical electric field. With an increasing electric field strength, a decreasing bandgap and an increasing energy difference between the valence band maximum and the twisted band point are both predicted by the tight-binding model and the low energy model. |
DOI | 10.1063/5.0039736 |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000617504900001 |
关键词[WOS] | BLACK PHOSPHORUS ; GRAPHENE |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
资助项目 | National Natural Science Foundation for the Youth (NSFY) of China[11802306] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; National Natural Science Foundation for the General Program (NSFG) of China[11734003] ; National Natural Science Foundation for the General Program (NSFG) of China[11872105] ; National Natural Science Foundation for the General Program (NSFG) of China[11911530176] ; National Key R&D Program of China[2016YFA0300600] ; National Key R&D Program of China[2017YFB0701600] |
项目资助者 | National Natural Science Foundation for the Youth (NSFY) of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; National Natural Science Foundation for the General Program (NSFG) of China ; National Key R&D Program of China |
论文分区 | 二类 |
力学所作者排名 | 1 |
RpAuthor | Pan, Douxing |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://dspace.imech.ac.cn/handle/311007/86125 |
专题 | 非线性力学国家重点实验室 |
作者单位 | 1.Univ Sci & Technol Beijing, Sch Math & Phys, Beijing 100083, Peoples R China; 2.Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 101400, Peoples R China; 3.Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China; 4.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Pan DX. Electronic dispersions of a stable twisted bilayer phosphorene in 2O-t alpha P phase[J]. JOURNAL OF APPLIED PHYSICS,2021,129,5,:12.Rp_Au:Pan, Douxing |
APA | 潘斗兴.(2021).Electronic dispersions of a stable twisted bilayer phosphorene in 2O-t alpha P phase.JOURNAL OF APPLIED PHYSICS,129(5),12. |
MLA | 潘斗兴."Electronic dispersions of a stable twisted bilayer phosphorene in 2O-t alpha P phase".JOURNAL OF APPLIED PHYSICS 129.5(2021):12. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Jp2021132.pdf(8010KB) | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
个性服务 |
推荐该条目 |
保存到收藏夹 |
查看访问统计 |
导出为Endnote文件 |
Lanfanshu学术 |
Lanfanshu学术中相似的文章 |
[潘斗兴]的文章 |
百度学术 |
百度学术中相似的文章 |
[潘斗兴]的文章 |
必应学术 |
必应学术中相似的文章 |
[潘斗兴]的文章 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论