Elastic-plastic behaviors of silicon carbide crystals

doi:10.1016/j.mtcomm.2021.102349

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	Elastic-plastic behaviors of silicon carbide crystals
	Zhu P(朱鹏)1,3; Chen QS(陈启生)1,2,3 ; Prasad, Vishwanath 4
通讯作者	Chen, Qi-Sheng([email protected])
发表期刊	MATERIALS TODAY COMMUNICATIONS
	2021-06-01
卷号	27 页码:9
摘要	The Alexander-Haasen (AH) model has been widely used to analyze the plastic deformation and dislocation generation in crystals. The model is applied to simulate the stress-strain relationship of SiC crystals in the temperature range of 1000-1800 degrees C. Based on the compression test data, the Young's modulus is obtained as a function of temperature, and the Young's modulus at 1292 degrees C estimated from the compression test data is about 8.0 GPa, only one fifty-first of the value at 20 degrees C. The ratio of the activation energy (Q) to stress exponent (n) is suggested to be an intrinsic property of dislocations in temperature regimes below 900 degrees C and above 1100 degrees C. The activation energy Q is found to be 3.9 eV when the temperature is higher than 1100 degrees C, and 0.9 eV when the temperature is less than 900 degrees C. The perfect dislocation proportion is introduced to describe the mixture of the two deformation mechanisms in the transition temperature regime. Then the model is applied to analyze the thermal stresses and dislocation density during the cooling-down process of SiC crystals. The elastic constants at high temperatures are derived from the data in the Brillouin-scattering tests of SiC crystals. The von Mises stress in the crystal is found to decrease to a minimum when temperature is about 1800 K. The maximum dislocation density in the crystal computed after the cooling-down process is about 260 cm(-2), agreeing qualitatively with the experimental data.
关键词	Dislocations Elastic-plastic material Finite elements
DOI	10.1016/j.mtcomm.2021.102349
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000683038600007
关键词[WOS]	DISLOCATION GLIDE ; ACTIVATION PARAMETERS ; TEMPERATURE ; DYNAMICS ; GROWTH ; FRACTURE ; STRESS ; YIELD
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
资助项目	National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015]
项目资助者	National Natural Science Foundation of China
论文分区	二类
力学所作者排名	1
RpAuthor	Chen, Qi-Sheng
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/87225
专题	微重力重点实验室
作者单位	1.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China; 4.Univ North Texas, Dept Mech & Energy Engn, Denton, TX 76203 USA
推荐引用方式 GB/T 7714	Zhu P,Chen QS,Prasad, Vishwanath. Elastic-plastic behaviors of silicon carbide crystals[J]. MATERIALS TODAY COMMUNICATIONS,2021,27:9.Rp_Au:Chen, Qi-Sheng
APA	朱鹏,陈启生,&Prasad, Vishwanath.(2021).Elastic-plastic behaviors of silicon carbide crystals.MATERIALS TODAY COMMUNICATIONS,27,9.
MLA	朱鹏,et al."Elastic-plastic behaviors of silicon carbide crystals".MATERIALS TODAY COMMUNICATIONS 27(2021):9.

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