| Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method | |
Zhang, Yu1; Wen, Xin1; Chen, Nuofu1 ; Zhang, Fang1; Chen, Jikun2; Hu WR(胡文瑞)3
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| 通讯作者 | Chen, Nuofu([email protected]) |
| 发表期刊 | CRYSTALS
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| 2024-02-01 | |
| 卷号 | 14期号:2页码:11 |
| 摘要 | Silicon carbide (SiC) polycrystalline powder. As the raw material for SiC single-crystal growth through the physical vapor transport (PVT) method, its surface size and shape have a great influence on growth of crystal. The surface size and shape of the evaporation area filled with polycrystalline powder were investigated by numerical simulation in this study. Firstly, the temperature distribution and deposition rate distribution for the PVT system were calculated by global numerical simulation, and the optimal ratio of polycrystalline powder surface diameter to seed crystal diameter was determined to be 1.6. Secondly, the surface of the evaporation area filled with polycrystalline powder was covered by a graphite ring and a graphite disc, respectively, to change its surface shape. The results show that adjusting the surface size and shape of the evaporation area filled with polycrystalline powder is an effective method to control the growth rate, growth stability, and growth surface shape of the single crystal. Finally, the result obtained by selecting appropriate covered structures for actual growth indicates that this process can act as a reference for improving the quality of single crystals. |
| 关键词 | numerical simulation SiC single crystal growth heat transfer fluid flow |
| DOI | 10.3390/cryst14020118 |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:001170062100001 |
| 关键词[WOS] | SILICON-CARBIDE ; SUBLIMATION GROWTH ; HEAT-TRANSFER ; KINETICS ; DESIGN ; MODEL |
| WOS研究方向 | Crystallography ; Materials Science |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary |
| 资助项目 | Ministry of Science and Technology of the People's Republic of China |
| 项目资助者 | Ministry of Science and Technology of the People's Republic of China |
| 论文分区 | 二类 |
| 力学所作者排名 | 3+ |
| RpAuthor | Chen, Nuofu |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://dspace.imech.ac.cn/handle/311007/94532 |
| 专题 | 微重力重点实验室 |
| 作者单位 | 1.North China Elect Power Univ, Sch New Energy, Beijing 102206, Peoples R China; 2.Beijing Univ Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China; 3.Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Yu,Wen, Xin,Chen, Nuofu,et al. Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method[J]. CRYSTALS,2024,14,2,:11.Rp_Au:Chen, Nuofu |
| APA | Zhang, Yu,Wen, Xin,Chen, Nuofu,Zhang, Fang,Chen, Jikun,&胡文瑞.(2024).Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method.CRYSTALS,14(2),11. |
| MLA | Zhang, Yu,et al."Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method".CRYSTALS 14.2(2024):11. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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