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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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微重力重点实验室 [1]
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俞育德 [1]
吴金良 [1]
张秀兰 [1]
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陈晓锋 [1]
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2009 [1]
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半导体学报 [1]
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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
期刊论文
半导体学报, 2009, 期号: 8, 页码: 47-51
Authors:
Chen XF(陈晓锋)
;
Chen NF(陈诺夫)
;
Wu JL(吴金良)
;
Zhang XL(张秀兰)
;
Chai CL(柴春林)
;
Yu YD(俞育德)
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Submit date：2015/09/02
Chemical Etching
Etch Pit
Defect
Growth Striations
Convection
