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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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Numerical simulation of ammonothermal growth processes of GaN crystals
会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems
会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
Authors:
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Yan JY(颜君毅)
;
Li W(李炜)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date:2012/04/01
Gan
Ammonothermal Growth
Baffle Opening
Fluid Flow
Thermal Fields
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems
期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
Authors:
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Yan JY(颜君毅)
;
Li W(李炜)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date:2012/04/01
Gan
Ammonothermal Growth
Baffle Opening
Fluid Flow
Thermal Fields
Gallium Nitride
Numerical simulation of ammonothermal growth processes of GaN crystals
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals
期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
Authors:
Chen QS(陈启生)
;
Deng GY(邓谷雨)
;
Ebadian A
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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Submit date:2009/08/03
Czochralski Growth
Flow Field
Temperature Distributions
Cusp Magnetic Field
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
Authors:
Chen QS(陈启生)
;
Yan JY(颜君毅)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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View/Download:314/112
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Submit date:2016/01/11
Fluid Flows
Growth Models
Growth From Vapor
Single-crystal Growth
Semiconducting Silicon Compounds
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:
Pendurti S
;
Chen QS(陈启生)
;
Prasad V
;
Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Submit date:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
Authors:
Zhang ZB(张自兵)
;
Lu J
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
Adobe PDF(228Kb)
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Submit date:2007/12/18