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Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography 期刊论文
AIP ADVANCES, 2013, 卷号: 3, 期号: 9, 页码: 092124/1-092124/7
Authors:  Wu K;  Zhang YY;  Wei TB;  Lan D(蓝鼎);  Sun B;  Zheng HY;  Lu HX;  Chen Y;  Wang JX;  Luo Y;  Li JM;  Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
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Led  Gan  Efficiency  Atomic Force Microscope(Afm)  
Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
Authors:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
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Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
Tuning Surface Wettability of In(x)Ga((1-x))N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination 期刊论文
Langmuir, 2011, 卷号: 27, 期号: 21, 页码: 13220-13225
Authors:  Su RG(苏瑞巩);  Liu HB;  Kong T;  Song Q;  Li N(李宁);  Jin G(靳刚);  Cheng GS;  Cheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China
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Self-assembled Monolayers  Nanowire Arrays  Gallium Nitride  Thin-films  Tio2  Gan  Water  Zno  Irradiation  Conversion  
Numerical simulation of ammonothermal growth processes of GaN crystals 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride  
Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N 期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
Authors:  Zhang FQ(张富强);  Chen NF(陈诺夫);  Liu XL;  Liu ZK;  Yang SY;  Chai CL;  Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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X-ray Diffraction  Ion Beam depositIon  Gan/al2o3  Ferromagnetic Materials  Implanted Gan  Injection  
Mn implanted GaAs by low energy ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
Authors:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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X-ray Diffraction  Ion Beam Deposit  Magnetic Materials  Semiconducting Gallium Arsenide  Curie-temperature  Semiconductors  Ferromagnetism  System  Mn)As  (Ga  Gan